Direct Electron, L.P.

Purpose: Direct Electron LP Will Develop a New High-speed Camera for High-resolution Electron Backscatter Diffraction (HR Ebsd) and Transmission Kikuchi Diffraction (TKD), Which Will Significantly Expand the Materials Properties That Can Be Probed in a Scanning Electron Microscope (sem). the Camera Will Include a Novel High-resolution (4K X 4K) Direct Detection Sensor Optimized for Detection of Low-energy Electrons (~3 - 30 Kev). the Sensor Will Be a Monolithic Device, With No Gaps or Inactive Areas.activities to Be Performed: the Awardee Will Demonstrate the Feasibility of Using a Large-format Direct Detection Sensor to Perform a Variety of Measurements Using HR Ebsd and TKD, and Then Develop and Test a Functional Prototype of the New High-resolution Sensor and High-speed Camera System. Expected Outcomes: a New Camera System Compatible With a Range of Commercial Sem Equipment That Enables New Materials Characterization Methods.intended Beneficiaries: U.s. Semiconductor Industry Using Materials Characterization During Development, Quality Control, and Failure Analysis for Current and Next-generation Devices.subrecipient Activities: the Recipient Plans to Subaward Funds for Facilities Access for Demonstrating and Testing Prototypes, and for Technical Consulting Related to Cmos Image Sensor Design and HR Ebsd Image Processing.