Theiss Research

Purpose: the Purpose of This Grant Is to Develop In-situ Electron Microscopy Measurements on Novel Low-dimensional Electronic Materials, Transition Metal Chalcogenides, for Advanced Microelectronics.activities to Be Performed: the Researchers Will Develop New Methodological Approach for Detecting and Quantifying Microstructural and Electronic Phase Transformations in Transition Metal Chalcogenide Thin Layers Under Thermal and Electrical In-situ Biasing in Transmission Electron Microscope (tem).expected Outcomes: the Researchers Are Designing the Protocol for In-situ Tem Characterization of Materials and Device Platforms for Novel Electronic Devices. It Will Include Methodology for Transferring Ultra-thin Layers of Transition Metal Chalcogenides Onto Tem Holders for In-situ Heating and Electrical Biasing, On-chip Fabrication of Electrical Contacts to These Layers Directly on the Tem Holder, and In-operando Macrostructural Characterization Under Heat Treatment and Applied Electrical Bias During Operation. a Suite of Characterization Techniques Will Allow Determining the Dynamics of Phase Transformation and Other Critical Processes in Ultra-thin Layers and Device Heterostructures to Enable Improved Material and Device Design for Advanced Microelectronics.intended Beneficiaries: the In-situ Microscopy Techniques That Will Be Developed Through This Grant Will Enable a Break-through in the Field of Measurement Science of Phase Transformation and Related Electronic Processes and Will Have a Practical Contribution to the Technology of 2D Materials for Advanced Microelectronics, Thus Benefiting Both Academic and Industrial R&D Communities.subrecipient Activities: the Recipient Does Not Intend to Subaward Funds.